Molecular beam epitaxy growth and thermal stability of Si1−xGex layers on extremely thin silicon-on-insulator substrates
- 1 May 1998
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 321 (1-2) , 245-250
- https://doi.org/10.1016/s0040-6090(98)00481-7
Abstract
No abstract availableKeywords
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