Admittance studies of neutron-irradiated silicon p+-n diodes

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Abstract
Defects introduced in n‐type silicon by neutron irradiation were investigated by measuring the conductance (G) and the capacitance (C) of p+‐n diodes. The method of the determination of the energy level, capture cross section, and concentration for each defect from the G‐T and C‐T curves for various frequencies was presented. Assuming that capture cross sections are independent of temperature, the energy levels of Ec−0.15 eV, Ec−0.22 eV, and Ec−0.39 eV were obtained. For these defects, the calculated values of the electron capture cross section were 2.6×10−14, 3.7×10−15, and 2.0×10−14 cm2, respectively. The introduction rate of defects for Ec−0.39 eV was twice that for Ec−0.22 eV which was twice that for Ec−0.15 eV. Comparing with other published data, the energy levels of Ec−0.15 eV and Ec−0.39 eV were found to be correlated with the A center and the divacancy, respectively.