III–V Nitride semiconductors for high-performance blue and green light-emitting devices
- 1 September 1997
- journal article
- blue emission-materials
- Published by Springer Nature in JOM
- Vol. 49 (9) , 18-23
- https://doi.org/10.1007/bf02914345
Abstract
No abstract availableKeywords
This publication has 37 references indexed in Scilit:
- LibraryMRS Bulletin, 1997
- Implantation and Dry Etching of Group-III-Nitride SemiconductorsMRS Bulletin, 1997
- Structural Defects in Heteroepitaxial and Homoepitaxial GaNMRS Proceedings, 1995
- Flip-chip bonding optimizes opto-ICsIEEE Circuits and Devices Magazine, 1992
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991
- An introduction to the development of the semiconductor laserIEEE Journal of Quantum Electronics, 1987
- Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layerApplied Physics Letters, 1986
- Recombination Radiation in GaAsJournal of Applied Physics, 1963
- COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONSApplied Physics Letters, 1962