Transient photomodulation spectroscopy of nanocrystalline hydrogenated silicon
- 15 March 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (8) , 5121-5127
- https://doi.org/10.1103/physrevb.39.5121
Abstract
Transient photomodulation spectra were measured on nanocrystalline Si:H films in the time domain from to s, spectral range from 0.25 to 1.25 eV, and temperature range from 80 to 300 K. The properties of the spectra are compatible with the presence of two phases, amorphous and crystalline. The amorphous phase is similar to a-Si:H. Photoinduced free-carrier absorption is associated with the crystalline phase; its decay is described by a stretched exponential which extends into much longer times than the exponential decays in crystalline Si. A model for the recombination process is proposed.
Keywords
This publication has 10 references indexed in Scilit:
- Transient-photomodulation-spectroscopy studies of carrier thermalization and recombination ina-Si:HPhysical Review B, 1988
- Photomodulation spectroscopy of dangling bonds in doped and undoped a-Si:HSolid State Communications, 1988
- Influence of interference on photoinduced changes in transmission and reflectionOptics Communications, 1986
- Hopping in Exponential Band TailsPhysical Review Letters, 1985
- Photoinduced free-carrier absorption in microcrystalline siliconSolid State Communications, 1984
- Luminescence and magnetic resonance in post-hydrogenated microcrystalline siliconSolid State Communications, 1983
- Optical absorption in hydrogenated microcrystalline siliconJournal of Physics C: Solid State Physics, 1983
- Raman scattering from hydrogenated microcrystalline and amorphous siliconJournal of Physics C: Solid State Physics, 1982
- Optical properties and transport in microcrystalline silicon prepared at temperatures below 400 °CJournal of Applied Physics, 1981
- Polycrystalline silicon films deposited in a glow discharge at temperatures below 250 °CApplied Physics Letters, 1980