Shubnikov-de Haas Oscillations inn-Type GaAs

Abstract
Shubnikov-de Haas oscillations in n-type GaAs are reported for four samples with carrier concentrations between 2×1016 and 2×1017/cm3. Temperatures employed ranged from 1.3 to 4.2°K, while magnetic fields were 34 kG and below. Scattering times were such that 0.1<ωcτ<0.9 for all measurements. Carrier concentrations derived from the oscillations agreed with Hall determinations to better than 10%. Only the fundamental oscillation in B1 was observed, the phase angle being 14π within a considerable uncertainty forced by the extrapolation to B1=0. Amplitude variation with temperature and field for the two samples with carrier concentration greater than 1017/cm3 was adequate to permit calculation of effective mass (0.058±0.006) and Dingle temperature (∼12°K). The magnitude of the amplitude agreed with theory to within a factor of 7.