Submicron-Length Tungsten-Gate Self-Aligned GaAs FET
- 1 July 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (7A) , L445
- https://doi.org/10.1143/jjap.21.l445
Abstract
A first submicron-gate ion-implanted self-aligned GaAs FET that has ever been made is reported. The FET has a 0.5 µm-long, 0.24 µm-thick tungsten gate which was fabricated by lift-off process and subsequently served as a mask for n+-implantation. The self-aligned FET showed the transconductance 2.4 times as large as that of a conventional FET of the same dimensions. The source-gate breakdown voltage was in excess of –3 V.Keywords
This publication has 3 references indexed in Scilit:
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- Lamella to Dendrite Transition in Solidifying Hypereutectic Fe–FeSi Alloy FilmsJapanese Journal of Applied Physics, 1982