Supercell calculation on the ideal silicon single vacancy
- 28 February 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 57 (5) , 305-307
- https://doi.org/10.1016/0038-1098(86)90096-7
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Energy levels in ideal and reconstructed models of a silicon vacancyJournal of Physics C: Solid State Physics, 1981
- Defect states dominated by localised potentials in semiconductorsJournal of Physics C: Solid State Physics, 1981
- Slater-Koster parametrization for Si and the ideal-vacancy calculationPhysical Review B, 1980
- Charge disturbances around neutral defects: A simple new method applied to the ideal silicon vacancyPhysical Review B, 1979
- Self-consistent pseudopotential calculation of electronic states associated with a reconstructed silicon vacancyPhysical Review B, 1979
- Self-Consistent Method for Point Defects in Semiconductors: Application to the Vacancy in SiliconPhysical Review Letters, 1978
- Self-Consistent Green's-Function Calculation of the Ideal Si VacancyPhysical Review Letters, 1978
- Comment on the electronic structure of the neutral vacancy in siliconPhysical Review B, 1977
- Self-consistent electronic states for reconstructed Si vacancy modelsPhysical Review B, 1976
- Electronic Structure of the Single Vacancy in SiliconPhysical Review B, 1971