Kink-free characteristics of AlSb/InAs high electron mobility transistors with planar Si doping beneath the channel
- 1 January 1998
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 45 (1) , 341-342
- https://doi.org/10.1109/16.658855
Abstract
No abstract availableKeywords
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