Photothermal ionisation spectroscopy of oxygen-related shallow defects in crystalline silicon
- 1 January 1989
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 48 (1) , 41-47
- https://doi.org/10.1007/bf00617762
Abstract
No abstract availableKeywords
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- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958