A 110-GHz AlSb/InAs MMIC amplifier
- 7 March 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We describe the first demonstration of a W-band amplifier using antimonide based compound semiconductor (ABCS) device technology. The three stage CPW MMIC uses two finger 0.1-/spl mu/m AlSb/InAs HEMT with a total periphery of 40 micron per device. Biased at a total MMIC dissipation of 3.7-m W the amplifier demonstrates 11/spl plusmn/ 1 dB gain over a 80-110 GHz bandwidth. When biased at total MMIC dissipation of 9.0 mW, the amplifier demonstrates 15/spl plusmn/ 1 dB gain over 80-100 GHz bandwidth.Keywords
This publication has 3 references indexed in Scilit:
- Metamorphic AlSb/InAs HEMT for low-power, high-speed electronicsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- AlSb/InAs HEMT's for low-voltage, high-speed applicationsIEEE Transactions on Electron Devices, 1998
- AlSb/InAs HEMTs using modulation InAs(Si)-dopingElectronics Letters, 1998