Line Defects in AIIIBV Semiconductors
- 16 December 1986
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 98 (2) , 503-510
- https://doi.org/10.1002/pssa.2210980221
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Anisotropic deformation behaviour of GaAsPhysica Status Solidi (a), 1984
- An i n s i t u x-ray study of gold/barrier-metal interactions with InGaAsP/InP layersJournal of Applied Physics, 1984
- AuGeNi migration affected by operating conditions of GaAs FETsSolid-State Electronics, 1984
- The migration of gold from the p-contact as a source of dark spot defects in InP/InGaAsP LED'sIEEE Transactions on Electron Devices, 1983
- Electron Microscopic Study of Alloying Behavior or Au on GaAsJapanese Journal of Applied Physics, 1979
- Direct Observation of Dislocations in Ga1 − x Al x As ‐ GaAs Grown by the LPE MethodJournal of the Electrochemical Society, 1978
- Effect of reconstruction during epitaxial growthJournal of Vacuum Science and Technology, 1977
- Selective Etching of III‐V Compounds with Redox SystemsJournal of the Electrochemical Society, 1976
- Microscopic Mechanisms of Growth of Dark Line Defects in Double Heterostructure LasersJournal of the Electrochemical Society, 1975
- On diffraction contrast from inclusionsPhilosophical Magazine, 1963