CURRENT INSTABILITIES IN n-InP
- 15 March 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 18 (6) , 211-213
- https://doi.org/10.1063/1.1653633
Abstract
Theory indicates that the frequent observation of circuit‐controlled oscillations in n‐InP, rather than transit‐time oscillations, may be attributed to low cathode boundary fields and the shape of the velocity‐electric field relation. For higher boundary fields, in the NDC region, computer calculations show recycling domains with some differences from GaAs. The incorporation of a large diffusion coefficient altered these results only in a minor way.Keywords
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