The structure of silicon carbide synthesized in diamond and silicon by ion implantation

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Abstract
The SiC synthesis was performed in both natural diamond and silicon as a result of the Si and C ion implantation, respectively, followed by annealing at temperatures in the range from 500° to 1200°C. The ion energy 40 keV and doses 3.7 · 1017 and 4.1 · 10 cm−2 were used at a dose rate of about 2μA cm−2. Using both highly sensitive x-ray diffractometry and ir spectrometry technique the SiC phase was found to be amorphous and polycrystalline (cubic) modification; the phase formation kinetics by ion implantation as well as the crystallization kinetics by subsequent annealing were studied, some parameters of the unit cell and the size of SiC crystallites were measured. The β;-SiC phase yield was evaluated to be less than 15% in the case of diamond and nearly 100% for silicon substrate.