96 GHz static frequency divider in SiGe bipolar technology
- 1 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10647775,p. 288-290
- https://doi.org/10.1109/gaas.2003.1252413
Abstract
We report a static frequency divider designed in a 210 GHz f/sub T/, 0.13 /spl mu/m SiGe bipolar technology. The circuit consumes about 44 mA per latch (140 mA total for the chip, with input-output stages) from a -5.5 V power supply and operates up to 96.6 GHz.Keywords
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