Kinetic modeling for hydrogen passivation of polycrystalline silicon
- 15 July 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (2) , 871-879
- https://doi.org/10.1063/1.336158
Abstract
The introduction of monatomic hydrogen into polysilicon grain boundaries has great potential for improving photovoltaic device efficiencies for thin-film and ribbon material. To optimize this process a more complete understanding of the relevant chemistry and kinetics is required. We discuss here two kinetic models of the passivation process: a one-dimensional Fickian model which is computationally easy and produces diffusion coefficients in good agreement with those in the literature and a two-dimensional model which though computationally complex provides a more accurate physical representation of the passivation process and more realistic grain-boundary diffusion coefficients for monatomic hydrogen. Both models appear to have practical utility for optimizing and understanding the passivation process. The nature of the site filling reaction is also discussed.This publication has 14 references indexed in Scilit:
- Polycrystalline WSe2 PhotoelectrodesJournal of the Electrochemical Society, 1982
- Modification of grain boundaries in polycrystalline silicon with fluorine and oxygenApplied Physics Letters, 1981
- Observation of grain boundary hydrogen in polycrystalline silicon with Fourier transform infrared spectroscopyApplied Physics Letters, 1981
- Deuterium at the Si-SiO2 interface detected by secondary-ion mass spectrometryApplied Physics Letters, 1981
- Visible Light Induced Water Cleavage in CdS Dispersions Loaded with Pt and RuO2, Hole Scavenging by RuO2Helvetica Chimica Acta, 1981
- Studies of the hydrogen passivation of silicon grain boundariesJournal of Applied Physics, 1981
- Improvement of polycrystalline silicon solar cells with grain-boundary hydrogenation techniquesApplied Physics Letters, 1980
- 7.3% Efficient thin-film, polycrystalline n-gallium arsenide semiconductor liquid junction solar cellJournal of the American Chemical Society, 1979
- Passivation of grain boundaries in polycrystalline siliconApplied Physics Letters, 1979
- CXLI. Self trapped electrons in a Fermi gasJournal of Computers in Education, 1954