Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ (II)

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Abstract
In the mapping of trace metal impurities on a Si wafer by the total reflection X-ray fluorescent (TXRF) analysis with use of monochromatic W-Lβ radiation, the trace metal impurity peaks as well as a main peak profile show a drastic change even with a slight translation of the measurement position on the wafer surface. This phenomenon is shown to arise from multiple effects: in the TXRF system (Technos TREX-610) the measurement point is adjusted by movements based on the polar coordinates and the incident X-ray beam is diffracted in the direction of the detector with high intensity when the Bragg-reflection condition is satisfied [I. Yakushiji et al.: Jpn. J. Appl. Phys. 31 (1992) 2872]. X-ray fluorescent peaks of Fe-Kα and Ni-Kα radiations with very small intensity were found to be influenced by the intensity of the W-Lβ radiation detected by the X-ray fluorescent detector. It is pointed out that this is very important in estimating the accuracy of the measurement data.

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