PHOTOLUMINESCENCE IN Bi12SiO20 AND Bi12GeO20
- 15 August 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 17 (4) , 178-179
- https://doi.org/10.1063/1.1653355
Abstract
A red photoluminescence emission band peaking at 1.95 eV is reported for Bi12SiO20 and Bi12GeO20. The mechanism for exciting the luminescence transition is considered, and a tentative model for the luminescence center is proposed. It is suggested that the most likely mode of excitation involves resonance transfer of energy from excitons to the luminescence center by means of a radiationless process followed by subsequent light emission from the luminescence center.This publication has 7 references indexed in Scilit:
- OPTICAL ACTIVITY AND FARADAY ROTATION IN BISMUTH OXIDE COMPOUNDSApplied Physics Letters, 1970
- Elasto-Optic Properties of Bi12GeO20, Bi12SiO20, and SrxBa1−xNb2O6Journal of Applied Physics, 1969
- Transport Processes of Photoinduced Carriers in Bismuth Germanium Oxide (Bi12GeO20)Journal of Applied Physics, 1968
- Photoactivity in Bismuth Germanium OxidePhysical Review Letters, 1967
- Dielectric materials for electrooptic, elastooptic, and ultrasonic device applicationsProceedings of the IEEE, 1967
- Optical Activity and Electrooptic Effect in Bismuth Germanium Oxide (Bi_12GeO_20)Applied Optics, 1966
- A Theory of Sensitized Luminescence in SolidsThe Journal of Chemical Physics, 1953