Selective Etching of Metallic Carbon Nanotubes by Gas-Phase Reaction
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- 10 November 2006
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 314 (5801) , 974-977
- https://doi.org/10.1126/science.1133781
Abstract
Metallic and semiconducting carbon nanotubes generally coexist in as-grown materials. We present a gas-phase plasma hydrocarbonation reaction to selectively etch and gasify metallic nanotubes, retaining the semiconducting nanotubes in near-pristine form. With this process, 100% of purely semiconducting nanotubes were obtained and connected in parallel for high-current transistors. The diameter- and metallicity-dependent “dry” chemical etching approach is scalable and compatible with existing semiconductor processing for future integrated circuits.Keywords
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