Hot carrier degradation of n-channel MOSFETs characterized by a gated-diode measurement technique
- 1 February 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (2) , 76-78
- https://doi.org/10.1109/55.32434
Abstract
The gated-diode measurement technique characterizes the physical damage induced in n-channel MOSFETs during hot-carrier stress. The results show that the gate oxide in the channel region is not affected by hot-carrier stress. The most severe damage is located in the gate oxide above the drain-gate overlap region. Furthermore, the measurements show that the density of generation centers in the substrate is increased after hot-carrier stress.<>Keywords
This publication has 2 references indexed in Scilit:
- Hot-electron and hole-emission effects in short n-channel MOSFET'sIEEE Transactions on Electron Devices, 1985
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966