I-V and C-V characteristics of ferroeletric SbSI(film)-Si-metal devices

1 October 1983

journal article
research article
Published by Taylor & Francis in Ferroelectrics Letters Section

Vol. 1 (2) , 57-63
https://doi.org/10.1080/07315178308200554

Abstract

I-V and C-V characteristics of flash evaporated SbSi films on n-type silicon substrates are reported. The I-V characteristics at voltages below 1.0 volt are consistent with the hetero-junction formation between p-SbS1 and n-type Silicon. However, the C-V characteristics resemble with that that of conventional MIS structures indicating that at higher voltages>1.0 volt, the film properties dominate over the junction properties. The C-V shows hysteresis effects on retrace which persist in the paraelectric phase, but the area of the loop is reduced.

Keywords

This publication has 4 references indexed in Scilit:

Electrical and structural properties of flash-evaporated ferroelectric lead germanate films on silicon
Thin Solid Films, 1981
RF-sputtered ferroelectric barium titanate films on silicon
Ferroelectrics, 1980
The particle-size dependence of the dielectric behaviour of SbSI
Journal of Physics D: Applied Physics, 1977
THEORY OF HETEROJUNCTIONS
Published by Elsevier ,1974