A 5 V-only virtual ground flash cell with an auxiliary gate for high density and high speed application
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 319-322
- https://doi.org/10.1109/iedm.1991.235439
Abstract
A 5 V-only virtual ground flash EEPROM cell with an auxiliary gate is proposed for high-density and high-speed application. The virtual ground auxiliary gate structure achieves a cell area of 2.59 mu m/sup 2/ with a 0.5- mu m technology and enables a fast programming of less than 1 mu s with a drain voltage of 5 V. It also provides a read-out current higher than 100 mu A and a soft-write lifetime greater than 10 years in read operation. The cell is suitable for high-density flash memories beyond 16 M bits.<>Keywords
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