State of Si and Sn in glassy Au alloys

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Abstract
Glassy films of Au-Sn were prepared by laser quenching with ns pulses in the composition range from 12 to 81 at. % Sn. Electrical resistivity was measured during annealing from 170 to 370 K and crystallization temperatures were determined. These properties are compared to those of glassy films of Au-Si investigated earlier as well as to those of vapor-quenched amorphous phases of the same systems. The resistivities of Au-Si and Au-Sn glasses are remarkably similar in the composition range up to 30 at. % Si or Sn. In this range Si is believed to be in a metallic state. The resistivity of disordered metallic Si is estimated as 82±8 μΩ cm. The stability of the Au-rich Si and Sn glasses are shown to be inversely correlated with the density of states at the Fermi level.