Change of Structure and Electrical Properties of FeSi2 Thin Film during Annealing

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Abstract
Changes of structure and electrical properties of FeSi2 thin film by annealing at 380-600°C were studied and the crystallization process of the film was discussed. As a result of annealing, transformation from an amorphous phase to FeSi2 crystal occurred at 380-420°C. FeSi2 crystalline in the film was imperfect and the number of defects decreased with increasing annealing temperature. The electrical resistivity, Seebeck coefficient and activation energy associated with acceptor levels increased with increasing annealing temperature throughout the temperature region. These changes in the electrical properties by annealing were explained by the decrease in the number of defects on annealing. Carrier mobilities in the annealed films at various temperatures were deduced from the results of activation energy measurement.