Li on bond-center sites in Si

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Abstract
Radioactive Li ions were implanted into high-resistivity p-type Si at temperatures between 40 and 530 K and their lattice sites determined by measuring the channeling and blocking effects of the emitted alpha particles. Implantations below room temperature lead to the occupation of the well-known tetrahedral interstitial sites, whereas for implantations above room temperature bond-center sites could be unambiguously identified. As cause of the corresponding lattice site changes, an interaction of diffusing Li with double vacancies is suggested.