Thin ferroelectric films of the lead zirconate-titanate type obtained by r.f. sputtering
- 1 October 1991
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 205 (1) , 76-84
- https://doi.org/10.1016/0040-6090(91)90474-c
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Preparation of epitaxial ABO3 perovskite-type oxide thin films on a (100)MgAl2O4/Si substrateJournal of Applied Physics, 1989
- Switching kinetics of lead zirconate titanate submicron thin-film memoriesJournal of Applied Physics, 1988
- Preparation and characteristics of pyroelectric infrared sensors made of c-axis oriented La-modified PbTi03 thin filmsJournal of Applied Physics, 1987
- Ferroelectric (Pb,La)(Zr,Ti)O3 epitaxial thin films on sapphire grown by rf-planar magnetron sputteringJournal of Applied Physics, 1986
- Preparation and basic properties of PbTiO3ferroelectric thin films and their device applicationsFerroelectrics, 1985
- High Speed Optical TIR Switches Using PLZT Thin-Film Waveguides on SapphireJapanese Journal of Applied Physics, 1985
- PLZT thin-film waveguidesApplied Optics, 1984
- PbTiO3ferroelectric thin film gate fet for infrared detectionFerroelectrics, 1981
- Electro-optic effects of PLZT thin filmsApplied Physics Letters, 1977
- Domain Formation and Domain Wall Motions in Ferroelectric BaTiSingle CrystalsPhysical Review B, 1954