Low-pressure growth of ZnTe by Ar laser-assisted metalorganic vapor phase epitaxy
- 27 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (21) , 2384-2386
- https://doi.org/10.1063/1.104878
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as ReactantsJapanese Journal of Applied Physics, 1990
- ZnTe Growth and In Situ Gas Analyses in Low-Pressure MOVPEJapanese Journal of Applied Physics, 1990
- Photoluminescence of ZnTe homoepitaxial layers grown by metalorganic vapor-phase epitaxy at low pressureJournal of Applied Physics, 1989
- The Dependence of Light Intensity on Surface Morphology and Impurity Incorporation for ZnSe Grown by Photo-Assisted MOVPEJapanese Journal of Applied Physics, 1989
- Homoepitaxial growth of ZnTe by low-pressure metalorganic vapor phase epitaxyJournal of Applied Physics, 1988
- Fabrication and photoluminescence properties of ZnTe and CdZnTe films by low pressure metalorganic chemical-vapour depositionJournal of Crystal Growth, 1988
- Kinetic simulation of gas phase reactions in MOVPE growthJournal of Crystal Growth, 1988
- EPR and ODMR investigations of defect centres in ZnTe:ClPhysica B+C, 1983
- SEM and photoluminescence study of Li segregation in annealed zinc tellurideSolid State Communications, 1979
- The nature of the predominant acceptors in high quality zinc tellurideJournal of Luminescence, 1978