ZnTe Growth and In Situ Gas Analyses in Low-Pressure MOVPE

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Abstract
Homoepitaxial layers of ZnTe have been grown by the low-pressure metalorganic vapor phase epitaxial method as a function of total pressure or substrate temperature. The growth rate of the epitaxial layer decreases with decrease in these growth parameters, and depends upon the substrate orientation. For the (110), (100) and (111)Te substrates, the activation energy associated with the growth rate is almost independent of the total pressure and substrate orientation. The in situ gas analyses, using the quadrupole mass spectrometer and ultraviolet spectrometer, were carried out in order to clarify the pyrolysis properties of the source materials.