Temperature dependence of 1/f noise in silicon
- 1 November 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (9) , 3196-3198
- https://doi.org/10.1063/1.337736
Abstract
Results of 1/f noise measurements in n‐Si and p‐Si between room temperature and liquid‐nitrogen temperature are presented. The temperature dependence of the noise in the n‐Si samples appears fairly complex, and it does not appear that one can find a simple model to explain it. Two different heat treatments of p‐type samples were used. In those treated at 950 °C the noise declines with increasing reciprocal temperature in a manner similar to that found by other investigators. For p‐type samples treated at 550 °C the noise at room temperature is two orders of magnitude smaller than for the high‐temperature samples and the temperature dependence is much smaller.This publication has 10 references indexed in Scilit:
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