The Low Temperature Reaction of Radiation Defects in GaAs Introduced by γ-Ray at 33 K

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Abstract
For the first time, the low temperature (< 83 K) reaction of defects in GaAs introduced by irradiation at low temperature (33 K) was observed by improved thermally stimulated current spectroscopy. The irradiation was done by Co60 γ-ray. A newly found level (0.13 eV) was observed after the irradiation. It disappeared by thermal annealing below 83 K. The annealing rate at 83 K was estimated as larger than 10-2 s-1. After the 0.13 eV level disappeared, another level (0.18 eV), which is usually observed as E2 in GaAs irradiated by electron beam, appeared and grew by subsequent annealing. The 0.18 eV level, E2, is likely due to a complex resulting from 0.13 eV level.