Epitaxial Growth of High-Purity GaAs by Low-Pressure MOCVD
- 1 February 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (2A) , L100-102
- https://doi.org/10.1143/jjap.23.l100
Abstract
High-purity GaAs epitaxial layers were reproducibly obtained at operating pressures lower than conventional low-pressure MOCVD. The epitaxial layer grown at 17 Torr exhibited a high mobility of 105,000 cm2/V·sec at 77 K and a fine exciton structure in the low-temperature PL spectrum. The conductivity of epitaxial layers grown at 8 Torr changed from p-type to n-type as the [AsH3]/[TMG] ratio increased. PL spectra indicated that carbon is the dominant acceptor and that carbon concentration and fine exciton structure depend strongly upon the [AsH3]/[TMG] ratio.Keywords
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