Ion implanted photodiode detectors in epitaxial (Gax In_1-x) As

Ion implanted p-n junction photodiodes in epitaxially grown (Ga_xIn_1-x) As material are reported on here. Photoresponse in these diodes was investigated for approximately the entire composition range of 0 < x < 1. High values for quantum efficiency were obtained for the devices with a high value of x. Peak $D_{\mathrm{\lambda },f}^{*}$ of greater than 10¹¹ [cm(Hz)^1/2/W] at room temperature was obtained at 0.8-μm wavelength, while a peak $D_{\mathrm{\lambda },f}^{*}$ of 5 × 10¹⁰ [cm(Hz)^1/2/W] was obtained at 165 K at 1.4-μm wavelength.