a-Si MOS Fet with Native-Oxide Gate Grown by Normal-Pressure and Low-Temperature Thermal-Oxidation Method

1 January 1987

journal article
Published by Springer Nature in MRS Proceedings

Vol. 95
https://doi.org/10.1557/proc-95-463

Abstract

Native silicon-dioxide film has been grown thermally under normalpressure and low-temperature conditions, and applied to a gate insulator of amorphous-silicon thin-film transistors. Th highest field-effect mobility under room-temperature conditions was 0.7cm²/Vs. Temperature dependence of the transistor characteristics has also been studied. The transistor has been operated in a wide temperature range from -196 °C to more than 200°C with satisfactorily stable manner. Characteristic temperature of the localized state density distribution has been estimated to be about 20° C.

Keywords

This publication has 3 references indexed in Scilit:

Low-Temperature Thermal-Oxidation of Silicon
Japanese Journal of Applied Physics, 1986
Proposed Planar-Type Amorphous-Silicon MOS Transistors
Japanese Journal of Applied Physics, 1985
Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors
Japanese Journal of Applied Physics, 1983