Proposed Planar-Type Amorphous-Silicon MOS Transistors

1 October 1985

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 24 (10A) , L812-814
https://doi.org/10.1143/jjap.24.l812

Abstract

Novel planar-type amorphous-silicon metal-oxide-semiconductor transistors have been proposed and their features have been demonstrated. The gate insulator of silicon-dioxide grown inside the original amorphous-silicon layer makes transistor characteristics highly stable. The source and drain of micro-crystal silicon make the fabrication process simple and the parasitic elements small. The on-current of the prototype transistor was extrapolated to decrease to one-half of its initial value 10¹⁰ years after the application of dc bias. The on-off current ratio was about 10⁶ and no voltage offset was observed. The field-effect mobility was 0.6 cm²/Vs.

Keywords

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