Improved MESFET characterization for analog circuit design and analysis
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 225-228
- https://doi.org/10.1109/gaas.1992.247262
Abstract
The third derivative of MESFET drain current behavior is useful for devise characterization. It provides information necessary to device a model to predict large-signal dynamic behavior with accuracy over an extended range of operating conditions. Extra parameters are proposed to define behavior in subthreshold and triode operating regions. A continuously differentiable form that models third-order behavior correctly describes these regions. The result is an accurate large-signal model suitable for design and analysis of distortion and intermodulation in analog circuits.<>Keywords
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