Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films
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- 11 June 2007
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (24)
- https://doi.org/10.1063/1.2748312
Abstract
The resistance switching mechanism of TiO2 films under voltage sweep mode was investigated. From the observed soft set of Pt∕TiO2∕Pt sample and from the polarity-dependant switching behavior of Ir(O)∕TiO2∕Pt sample, local rupture and recovery of conducting filaments near the anode interface wer identified as the switching mechanism. This is consistent with the authors’ recent observation [K. Kim et al., Electrchem. Solid-State Lett. 9, G343 (2006)] of the resistance switching property of Al2O3∕TiO2 multilayers, where switching was controlled by the layer close to the anode. It appears that most parts of the filaments are preserved during switching and only a small portion of the film near the anode contributes to switching.Keywords
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