Improvement of resistive memory switching in NiO using IrO2
- 5 June 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (23) , 232106
- https://doi.org/10.1063/1.2210087
Abstract
For the development of resistivememory devices using NiO, improvements of several memory switching properties are required. In NiO memory cells with noble metal electrodes, broad dispersions of memory switching parameters are generally observed with continuous memory switchings. We report the improvements in minimizing the dispersions of all memory switching parameters using thin Ir O 2 layers between NiO and electrodes. The role of thin Ir O 2 layers on NiO growth and memory switching stabilization are discussed.Keywords
This publication has 8 references indexed in Scilit:
- Electrical observations of filamentary conductions for the resistive memory switching in NiO filmsApplied Physics Letters, 2006
- Electrode dependence of resistance switching in polycrystalline NiO filmsApplied Physics Letters, 2005
- Conductivity switching characteristics and reset currents in NiO filmsApplied Physics Letters, 2005
- Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transitionPhysical Review B, 2005
- Reproducible resistance switching in polycrystalline NiO filmsApplied Physics Letters, 2004
- Electrical characterization of stressed and broken down SiO2 films at a nanometer scale using a conductive atomic force microscopeJournal of Applied Physics, 2002
- A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodesJournal of Applied Physics, 1998
- Preparation of Pb(Zr,Ti)O3 thin films on electrodes including IrO2Applied Physics Letters, 1994