Defect annealing and transport properties in high-purity InSb irradiated at 80 K
- 16 September 1978
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 49 (1) , 285-292
- https://doi.org/10.1002/pssa.2210490136
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Magnetoresistance effect in near intrinsic semiconductors. Influence of sample geometry. A new method for the determination of carrier densities and mobilitiesPhysica Status Solidi (a), 1977
- Low-temperature electron mobility in InSbJournal of Applied Physics, 1977
- Reconciliation of the Conwell-Weisskopf and Brooks-Herring formulae for charged-impurity scattering in semiconductors: Third-body interferenceJournal of Physics C: Solid State Physics, 1977
- Measurement of the Hall coefficient on short specimens with high-resistance contactsJournal of Physics D: Applied Physics, 1975
- Electric properties of compensated p-type InSbPhysica Status Solidi (a), 1973
- III-V compound reviewRadiation Effects, 1971
- Stage-II Recovery in Electron-Irradiated InSbPhysical Review B, 1966
- Change in Thermal Conductivity Upon Low-Temperature Electron Irradiation: InSbPhysical Review B, 1964