Sb-Heterostructure Low Noise W-Band Detector Diode Sensitivity Measurements
- 1 June 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 826-829
- https://doi.org/10.1109/mwsym.2006.249800
Abstract
Sb-heterostructure diodes have become the detector of choice for W-band millimeter wave imaging cameras. Here we demonstrate lower impedance versions that optimize noise equivalent power (NEP). The goal is to decrease the gain required of the RF pre-amplifier, ideally to zero. Measured W-band sensitivities for three diodes are 3500, 5500, and 6000 V/W. Their zero bias differential resistance values imply Johnson noise limited NEP's of 0.98, 0.83, and 0.79 pW/Hz frac12 , respectively, much less than obtained from conventional Schottky diodes. A wideband transition from a horn antenna to the 6000 V/W detector has produced an integrated bandwidth of 30 GHz with implied temperature sensitivity (NEDeltaT) close to 10degKKeywords
This publication has 4 references indexed in Scilit:
- Low noise Sb-heterostructure diode detectors for W-band imaging arrays without RF amplificationPublished by SPIE-Intl Soc Optical Eng ,2005
- W-band direct detection circuit performance with Sb-heterostructure diodesIEEE Microwave and Wireless Components Letters, 2004
- Passive millimeter-wave imaging for airborne and security applicationsPublished by SPIE-Intl Soc Optical Eng ,2003
- Sb-heterostructure interband backward diodesIEEE Electron Device Letters, 2000