Characterization and Analysis of a Power Transistor for Reverse Second Breakdown When Subjected to Neutron Fluence
- 1 January 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 28 (6) , 4360-4365
- https://doi.org/10.1109/TNS.1981.4335730
Abstract
It is shown, using extensive experimental data, that the dominant mode of reverse-biased second breakdown (RBSB) in a typical fast-switching radiation hardened power transistor is that of avalanche injection. This is an electronic mechanism rather than a thermal mechanism; therefore, the use of the second breakdown energy parameter, ESB, to characterize the RBSB performance is incorrect. The RBSB characteristics of a large sample of devices were measured over a wide range of conditions in sophisticated test circuits before and after neutron irradiation. The observed behavior is explained using computer models for current pinching and avalanche injection.Keywords
This publication has 7 references indexed in Scilit:
- Second breakdown in power transistors due to avalanche injectionIEEE Transactions on Electron Devices, 1976
- Negative resistance induced by avalanche injection in bulk semiconductorsIEEE Transactions on Electron Devices, 1974
- Second breakdown of transistors during inductive turnoffProceedings of the IEEE, 1973
- Avalanche injection and second breakdown in transistorsIEEE Transactions on Electron Devices, 1970
- Design curves for predicting fast-neutron-induced resistivity changes in siliconProceedings of the IEEE, 1968
- A theory of transistor cutoff frequency (fT) falloff at high current densitiesIRE Transactions on Electron Devices, 1962
- An analysis of switching effects in high power diffused base silicon transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1959