SiH3 Radical Density in Pulsed Silane Plasma
- 1 March 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (3R) , 585
- https://doi.org/10.1143/jjap.29.585
Abstract
The SiH3 radical density in pulsed silane discharge plasma was measured by infrared diode laser absorption spectroscopy (IRLAS) for three buffer gases and also as functions of the sample pressure and the pulse width. They were compared with the SiH and SiH2 radical densities. The growth rate of a-Si:H thin film was compared with the SiH3 radical density on various plasma conditions. These data were employed to discuss the contribution of SiH3 to a-Si:H thin-film growth.Keywords
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