Response of a Partially Illuminated Photovoltaic P-N Junction Cell†

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Abstract
A theoretical analysis has been carried out of the problem of response of a partially illuminated photovoltaic cell. The analysis is based on the assumption that the diffusion-driven carriers from the illuminated zone, on crossing the junction, spread out evenly over the same through the majority carrier relaxation process. Experimental results are given in support of the main theoretical deduction. It is found that, as a practical tool for measurement of radiant power, the arrangement does not require correction for end-effect so long as the radiation does not penetrate appreciably into the n-region and has a duration large compared to the minority carrier lifetime in that region.

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