Characterization of orientation-dependent etching properties of single-crystal silicon: effects of KOH concentration
- 1 January 1998
- journal article
- Published by Elsevier in Sensors and Actuators A: Physical
- Vol. 64 (1) , 87-93
- https://doi.org/10.1016/s0924-4247(97)01658-0
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Use of Modified Free Energy Theorems to Predict Equilibrium Growing and Etching ShapesJournal of Applied Physics, 1962