Hall-effect analysis of GaN films grown by hydride vapor phase epitaxy
- 9 March 1998
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (10) , 1214-1216
- https://doi.org/10.1063/1.121017
Abstract
Hall-effect measurements were conducted on unintentionally doped n-type GaN films grown on sapphire substrates by hydride vapor phase epitaxy. Film nucleation involved either a GaCl or ZnO pretreatment. Variable temperature Hall-effect measurements reveal a dependence of both the electron concentration and the Hall mobility on film thickness. We demonstrate that this dependence is indicative of a nonuniform distribution of electrically active defects. For GaCl-pretreated sapphire the presence of a highly conductive, 200-nm-thick near-interface layer is likely to account for the observed phenomena. For ZnO-pretreated sapphire the Hall-effect data clearly indicate a continuous reduction of the defect density with increasing film thickness.Keywords
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