The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates
- 2 March 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 137 (1-2) , 170-174
- https://doi.org/10.1016/0022-0248(94)91267-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1993
- The growth of thick GaN film on sapphire substrate by using ZnO buffer layerJournal of Crystal Growth, 1993
- Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layerApplied Physics Letters, 1992
- Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the StrainJapanese Journal of Applied Physics, 1992
- Hole Compensation Mechanism of P-Type GaN FilmsJapanese Journal of Applied Physics, 1992
- Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPEJournal of the Electrochemical Society, 1990
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984