Comments on the Huang and Taylor model of ion-implanted silicon-gate depletion-mode IGFET
- 31 March 1985
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (3) , 313-315
- https://doi.org/10.1016/0038-1101(85)90012-7
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Analysis and characterization of the depletion-mode IGFETIEEE Journal of Solid-State Circuits, 1980
- Extraction of average doping density and junction depth in an ion-implanted deep-depletion transistorIEEE Transactions on Electron Devices, 1980
- Modeling of an ion-implanted silicon-gate depletion-mode IGFETIEEE Transactions on Electron Devices, 1975