The roughness of heteroepitaxial silicon-on-sapphire
- 1 November 1988
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (11) , 1123-1125
- https://doi.org/10.1088/0268-1242/3/11/007
Abstract
Previously published data of ultraviolet ellipsometric spectra of silicon-on-sapphire (SOS) is examined in terms of a silicon surface and native oxide with rough boundaries. This model is shown to be consistent with specular reflectance spectra, unlike previously proposed multilayer models. This questions the existence of amorphous silicon in the surface of SOS wafers.Keywords
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