Cs-induced surface state on GaAs(110)
- 15 June 1990
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (17) , 12342-12345
- https://doi.org/10.1103/physrevb.41.12342
Abstract
Cesium adsorption on GaAs(110) has been studied by angle-resolved photoemission spectroscopy at room temperature in the submonolayer-coverage regime. We report the observation of a Cs-induced surface state in the vicinity of the surface-Brillouin-zone edge. The possible origin of the state is discussed in relation to recent structural observations. The onset of the Cs-induced surface state can be correlated with the appearance of a second Cs 5p core-level emission feature at ∼0.2 monolayer Cs coverage.Keywords
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