On the out-diffusion of oxygen from silicon
- 16 October 1981
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 67 (2) , 511-516
- https://doi.org/10.1002/pssa.2210670220
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- The shrinkage and growth of oxidation stacking faults in silicon and the influence of bulk oxygenJournal of Applied Physics, 1980
- Effects of ambients on oxygen precipitation in siliconApplied Physics Letters, 1980
- Annealing behavior of the oxygen donor in siliconApplied Physics Letters, 1979
- High Temperature Annealing Behavior of Oxygen in SiliconJournal of the Electrochemical Society, 1978
- Dislocation pinning effect of oxygen atoms in siliconApplied Physics Letters, 1977
- Beeinflussung des spezifischen Widerstandes von sauerstoffreichen Silizium‐Einkristallen durch TemperprozesseCrystal Research and Technology, 1977
- The effect of carbon on thermal donor formation in heat treated pulled silicon crystalsJournal of Physics and Chemistry of Solids, 1972
- The diffusion of oxygen in silicon and germaniumJournal of Physics and Chemistry of Solids, 1960
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956