Band-edge states and valence-band offset of GaP/InP strained-layer superlattices
- 15 June 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (24) , 16299-16304
- https://doi.org/10.1103/physrevb.47.16299
Abstract
A study of the optical properties of short-period GaP/InP(001) strained-layer superlattices is presented. Photoluminescence, photoreflectance, and resonant Raman spectroscopies have been used to determine both the interband transition energies and the spatial distribution of the electronic wave functions. Comparison of the experimental results to those of an empirical tight-binding calculation provides an overall picture of the superlattices’s electronic structure, and gives an estimate of the valence-band offset of about 0.6 eV.Keywords
This publication has 17 references indexed in Scilit:
- Raman-scattering study of GaP/InP strained-layer superlatticesPhysical Review B, 1992
- Electronic structure of strained GaAs/GaP (001) superlatticesPhysical Review B, 1991
- Atomic layer epitaxy of GaInP ordered alloyApplied Physics Letters, 1990
- Atomic layer molecular beam epitaxy (Almbe) of III?V compounds: Growth modes and applicationsApplied Physics A, 1989
- Raman scattering in (GaP/(InPstrained-layer superlatticesPhysical Review B, 1989
- Observation of Strong Ordering inalloy semiconductorsPhysical Review Letters, 1988
- Band-edge deformation potentials in a tight-binding frameworkPhysical Review B, 1988
- Evidence for the existence of an ordered state in Ga0.5In0.5P grown by metalorganic vapor phase epitaxy and its relation to band-gap energyApplied Physics Letters, 1987
- New tight-binding parameters for covalent solids obtained using Louie peripheral statesPhysical Review B, 1981
- Simplified LCAO Method for the Periodic Potential ProblemPhysical Review B, 1954