High-Temperature Operation of Silicon Carbide MOSFET

1 February 1987

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 26 (2R)
https://doi.org/10.1143/jjap.26.310

Abstract

High-temperature operation up to 400°C was confirmed for a 3C-type silicon carbide (SiC) MOSFET which was fabricated in an n-type SiC layer epitaxially grown on a silicon (Si) substrate. It was also observed that the transconductance of the MOSFET increased as the ambient temperature increased.

Keywords

TEMPERATURE OPERATION
MOSFET
SILICON CARBIDE
HIGH TEMPERATURE
SIC
FABRICATED
SUBSTRATE

This publication has 2 references indexed in Scilit:

Experimental 3C-SiC MOSFET
IEEE Electron Device Letters, 1986
High-temperature electrical properties of 3C-SiC epitaxial layers grown by chemical vapor deposition
Applied Physics Letters, 1984